DMS3016SFG Todos los transistores

 

DMS3016SFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMS3016SFG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.98 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 10.2 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 44.6 nC

Conductancia de drenaje-sustrato (Cd): 1886 pF

Resistencia drenaje-fuente RDS(on): 0.016 Ohm

Empaquetado / Estuche: POWERDI33338

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DMS3016SFG Datasheet (PDF)

2.1. dms3016sss.pdf Size:161K _diodes

DMS3016SFG
DMS3016SFG

DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8 integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0 Moisture Sen

3.1. fdms3016dc.pdf Size:555K _fairchild_semi

DMS3016SFG
DMS3016SFG

July 2013 FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 49 A, 6.0 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 mΩ at VGS

 4.1. dms3015sss.pdf Size:152K _diodes

DMS3016SFG
DMS3016SFG

DMS3015SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8 integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0 Moisture Sen

4.2. dms3017ssd.pdf Size:202K _diodes

DMS3016SFG
DMS3016SFG

DMS3017SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8 integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(on) minimizes conduction loss UL Flammability Classification Rating 94V-0 Moisture Sensitivit

 4.3. dms3014sss.pdf Size:158K _diodes

DMS3016SFG
DMS3016SFG

DMS3014SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8 integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0 Moisture Sen

4.4. dms3019ssd.pdf Size:199K _diodes

DMS3016SFG
DMS3016SFG

DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8 integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. UL Low RDS(on) minimizes conduction loss Flammability Classification Rating 94V-0 Moisture Sensitivit

Otros transistores... DMN3300U , DMN3404L , DMN3730U , DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL , TPC8107 , DMS3016SSSA , ZXM61N03F , ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 .

 

 
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