DMS3016SFG Datasheet and Replacement
Type Designator: DMS3016SFG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10.2 A
Cossⓘ - Output Capacitance: 1886 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: POWERDI-3333-8
DMS3016SFG substitution
DMS3016SFG Datasheet (PDF)
dms3016sss.pdf
DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3016sssa.pdf
DMS3016SSSAN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
fdms3016dc.pdf
July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS
Datasheet: DMN3300U , DMN3404L , DMN3730U , DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL , P60NF06 , DMS3016SSSA , ZXM61N03F , ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 .
History: NP109N055PUK | AOB482
Keywords - DMS3016SFG MOSFET datasheet
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History: NP109N055PUK | AOB482
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