AP9N20P Todos los transistores

 

AP9N20P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9N20P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 103 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de AP9N20P MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP9N20P Datasheet (PDF)

 ..1. Size:1138K  cn apm
 ap9n20p.pdf pdf_icon

AP9N20P

AP9N20P 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

 8.1. Size:1216K  cn apm
 ap9n20d.pdf pdf_icon

AP9N20P

AP9N20D 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

 8.2. Size:1222K  cn apm
 ap9n20y.pdf pdf_icon

AP9N20P

AP9N20Y 200V N-Channel Enhancement Mode MOSFET Description The AP9N20Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

Otros transistores... AP3409MI , AP90N06F , AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , P0903BDG , AP9N20Y , AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF .

History: IRFZ24A

 

 
Back to Top

 


 
.