AP9N20P Datasheet and Replacement
Type Designator: AP9N20P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 103 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220
AP9N20P substitution
AP9N20P Datasheet (PDF)
ap9n20p.pdf
AP9N20P 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
ap9n20d.pdf
AP9N20D 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
ap9n20y.pdf
AP9N20Y 200V N-Channel Enhancement Mode MOSFET Description The AP9N20Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
Datasheet: AP3409MI , AP90N06F , AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , P0903BDG , AP9N20Y , AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF .
Keywords - AP9N20P MOSFET datasheet
AP9N20P cross reference
AP9N20P equivalent finder
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AP9N20P substitution
AP9N20P replacement
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