DMS3016SSSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMS3016SSSA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 9.8 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1849 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: SO8
- Selección de transistores por parámetros
DMS3016SSSA Datasheet (PDF)
dms3016sssa.pdf

DMS3016SSSAN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3016sss.pdf

DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
fdms3016dc.pdf

July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS
dms3012sfg.pdf

DMS3012SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver: TA = +25C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo
Otros transistores... DMN3404L , DMN3730U , DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL , DMS3016SFG , EMB04N03H , ZXM61N03F , ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 .
History: STB31L01 | BUK7Y153-100E | IPI100N06S3L-04 | 1N60G-TF2-T | VN2110 | IPP60R280P6 | IMW120R140M1H
History: STB31L01 | BUK7Y153-100E | IPI100N06S3L-04 | 1N60G-TF2-T | VN2110 | IPP60R280P6 | IMW120R140M1H



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