DMS3016SSSA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMS3016SSSA
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.54 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 2.3 V
Максимально допустимый постоянный ток стока |Id|: 9.8 A
Общий заряд затвора (Qg): 18.5 nC
Выходная емкость (Cd): 1849 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: SO8
Аналог (замена) для DMS3016SSSA
DMS3016SSSA Datasheet (PDF)
dms3016sssa.pdf
DMS3016SSSAN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3016sss.pdf
DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
fdms3016dc.pdf
July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS
dms3012sfg.pdf
DMS3012SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver: TA = +25C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo
dms3014sss.pdf
DMS3014SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3017ssd.pdf
DMS3017SSDASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(on) minimizes conduction loss UL Flammability Classification Rating 94V-0
dms3014sfg.pdf
DMS3014SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits DIOFET utilizes a unique patented process to monolithically ID max V(BR)DSS RDS(ON) max integrate a MOSFET and a Schottky in a single die to deliver: TA = 25C Low RDS(ON) minimize conduction losses Low VSD reducing the losses due to body diode conduction 13m
dms3015sss.pdf
DMS3015SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3019ssd.pdf
DMS3019SSDASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. UL Low RDS(on) minimizes conduction loss Flammability Classification Rating 94V-0
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