AP80N03DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80N03DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: PDFN3X3-8L

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AP80N03DF datasheet

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 ap80n03df.pdf pdf_icon

AP80N03DF

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R

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 ap80n03d.pdf pdf_icon

AP80N03DF

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R

 7.1. Size:175K  ape
 ap80n03gp.pdf pdf_icon

AP80N03DF

AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low

 7.2. Size:1583K  cn apm
 ap80n03nf.pdf pdf_icon

AP80N03DF

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R

MOSTRAR MÁS

Otros transistores... APG120N12NF, APG130N06D, APG130N06NF, AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF, AP80N03D, AOD4184A, AP80N03NF, AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF