AP80N03DF - аналоги и даташиты транзистора

 

AP80N03DF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP80N03DF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 43.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: PDFN3X3-8L
 

 Аналог (замена) для AP80N03DF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP80N03DF Datasheet (PDF)

 ..1. Size:1838K  cn apm
ap80n03df.pdfpdf_icon

AP80N03DF

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR

 6.1. Size:1216K  cn apm
ap80n03d.pdfpdf_icon

AP80N03DF

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS DR

 7.1. Size:175K  ape
ap80n03gp.pdfpdf_icon

AP80N03DF

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

 7.2. Size:1583K  cn apm
ap80n03nf.pdfpdf_icon

AP80N03DF

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR

Другие MOSFET... APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AP7P15Y , AP80N02DF , AP80N02NF , AP80N03D , IRFP064N , AP80N03NF , AP80N04D , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF .

History: IRF7805

 

 
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