AP80N04DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80N04DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.8 nS

Cossⓘ - Capacitancia de salida: 275 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PDFN3X3-8L

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AP80N04DF datasheet

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 ap80n04df.pdf pdf_icon

AP80N04DF

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

 6.1. Size:1651K  cn apm
 ap80n04d.pdf pdf_icon

AP80N04DF

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

 7.1. Size:570K  1
 ap80n04q.pdf pdf_icon

AP80N04DF

 7.2. Size:1965K  1
 ap80n04g.pdf pdf_icon

AP80N04DF

MOSTRAR MÁS

Otros transistores... AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF, AP80N03D, AP80N03DF, AP80N03NF, AP80N04D, IRF740, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF, AP80P06D, AP150N03D, AP150N03NF