AP80N04DF MOSFET Datasheet: N-Ch, 40V, 80A. Full specification with pinout and replacement list

AP80N04DF Specs and Replacement

Type Designator: AP80N04DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.8 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN3X3-8L

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AP80N04DF datasheet

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AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒

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AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒

7.1. Size:570K 1
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