AP80P04NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80P04NF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35.2 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: PDFN5X6-8L

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AP80P04NF datasheet

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AP80P04NF

AP80P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP80P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

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 ap80p04k.pdf pdf_icon

AP80P04NF

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 ap80p04d.pdf pdf_icon

AP80P04NF

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

 8.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P04NF

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

MOSTRAR MÁS

Otros transistores... AP80N03DF, AP80N03NF, AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, 50N06, AP80P06D, AP150N03D, AP150N03NF, AP150N04D, AP150P03NF, AP15G03DF, AP15G03NF, AP15N02S