AP80P04NF Specs and Replacement
Type Designator: AP80P04NF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35.2 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN5X6-8L
AP80P04NF substitution
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AP80P04NF datasheet
ap80p04nf.pdf
AP80P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP80P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R ... See More ⇒
ap80p04d.pdf
AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R ... See More ⇒
ap80p06d.pdf
AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R ... See More ⇒
Detailed specifications: AP80N03DF, AP80N03NF, AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, 50N06, AP80P06D, AP150N03D, AP150N03NF, AP150N04D, AP150P03NF, AP15G03DF, AP15G03NF, AP15N02S
Keywords - AP80P04NF MOSFET specs
AP80P04NF cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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