AP80P06D Todos los transistores

 

AP80P06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80P06D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO252
 

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AP80P06D Datasheet (PDF)

 ..1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P06D

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 7.1. Size:1789K  cn apm
 ap80p06nf.pdf pdf_icon

AP80P06D

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 7.2. Size:1715K  cn apm
 ap80p06p ap80p06t.pdf pdf_icon

AP80P06D

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS DR

 8.1. Size:1788K  cn apm
 ap80p04d.pdf pdf_icon

AP80P06D

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS DR

MOSTRAR MÁS

Otros transistores... AP80N03NF , AP80N04D , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF , IRFP460 , , , , , , , , .

History: AP80N07D

 

 
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