AP80P06D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP80P06D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP80P06D MOSFET
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AP80P06D datasheet
ap80p06d.pdf
AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
ap80p06nf.pdf
AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
ap80p06p ap80p06t.pdf
AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R
Otros transistores... AP80N03NF, AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF, IRFP460, AP150N03D, AP150N03NF, AP150N04D, AP150P03NF, AP15G03DF, AP15G03NF, AP15N02S, AP15N06S
History: RU60P60R
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