AP80P06D. Аналоги и основные параметры

Наименование производителя: AP80P06D

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 110 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.5 ns

Cossⓘ - Выходная емкость: 600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: TO252

Аналог (замена) для AP80P06D

- подборⓘ MOSFET транзистора по параметрам

 

AP80P06D даташит

 ..1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P06D

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

 7.1. Size:1789K  cn apm
 ap80p06nf.pdf pdf_icon

AP80P06D

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

 7.2. Size:1715K  cn apm
 ap80p06p ap80p06t.pdf pdf_icon

AP80P06D

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R

 8.1. Size:508K  allpower
 ap80p04k.pdf pdf_icon

AP80P06D

ПОКАЗАТЬ ЕЩЁ

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