AP150N03NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP150N03NF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 682 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: PDFN5X6-8L

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AP150N03NF datasheet

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AP150N03NF

AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS D R

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 ap150n03q.pdf pdf_icon

AP150N03NF

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 ap150n03g.pdf pdf_icon

AP150N03NF

 6.3. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N03NF

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

MOSTRAR MÁS

Otros transistores... AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF, AP80P06D, AP150N03D, IRF640, AP150N04D, AP150P03NF, AP15G03DF, AP15G03NF, AP15N02S, AP15N06S, AP15N10D, AP15N10D-L