All MOSFET. AP150N03NF Datasheet

 

AP150N03NF Datasheet and Replacement


   Type Designator: AP150N03NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 682 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: PDFN5X6-8L
 

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AP150N03NF Datasheet (PDF)

 ..1. Size:1263K  cn apm
ap150n03nf.pdf pdf_icon

AP150N03NF

AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS DR

 6.1. Size:838K  cn apm
ap150n03d.pdf pdf_icon

AP150N03NF

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.2. Size:910K  cn apm
ap150n03p ap150n03t.pdf pdf_icon

AP150N03NF

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 7.1. Size:1281K  cn apm
ap150n04d.pdf pdf_icon

AP150N03NF

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

Datasheet: AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , AP150N03D , IRF640 , AP150N04D , AP150P03NF , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L .

History: AP150N04D

Keywords - AP150N03NF MOSFET datasheet

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