AP150P03NF Todos los transistores

 

AP150P03NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP150P03NF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: PDFN5X6-8L
 

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AP150P03NF Datasheet (PDF)

 ..1. Size:1534K  cn apm
 ap150p03nf.pdf pdf_icon

AP150P03NF

AP150P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP150P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-150A DS DR

 9.1. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150P03NF

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 9.2. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150P03NF

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 9.3. Size:1281K  cn apm
 ap150n04d.pdf pdf_icon

AP150P03NF

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

MOSTRAR MÁS

Otros transistores... AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , AP150N03D , AP150N03NF , AP150N04D , IRLZ44N , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y .

History: AP150N04D | AP80N07D

 

 
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