AP150P03NF - аналоги и даташиты транзистора

 

AP150P03NF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP150P03NF
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: PDFN5X6-8L
 

 Аналог (замена) для AP150P03NF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP150P03NF Datasheet (PDF)

 ..1. Size:1534K  cn apm
 ap150p03nf.pdf pdf_icon

AP150P03NF

AP150P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP150P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-150A DS DR

 9.1. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150P03NF

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 9.2. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150P03NF

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 9.3. Size:1281K  cn apm
 ap150n04d.pdf pdf_icon

AP150P03NF

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , AP150N03D , AP150N03NF , AP150N04D , IRLZ44N , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y .

History: S80N08RN | STM6912

 

 
Back to Top

 


 
.