AP15N10S Todos los transistores

 

AP15N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP15N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.112 Ohm
   Paquete / Cubierta: SOP8
 

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AP15N10S Datasheet (PDF)

 ..1. Size:1038K  cn apm
 ap15n10s.pdf pdf_icon

AP15N10S

AP15N10S 100V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =15A DS DR

 7.1. Size:6508K  allpower
 ap15n10.pdf pdf_icon

AP15N10S

AP15N10DATA SHEETDATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

 7.2. Size:2129K  cn apm
 ap15n10d-l.pdf pdf_icon

AP15N10S

AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS DR

 7.3. Size:2992K  cn apm
 ap15n10y.pdf pdf_icon

AP15N10S

AP15N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP15N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS DR

MOSTRAR MÁS

Otros transistores... AP150N04D , AP150P03NF , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , 7N65 , AP15N10Y , AP15N12D , AP15P04D , AP15P06D , , , , .

History: STU802S

 

 
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