All MOSFET. AP15N10S Datasheet

 

AP15N10S Datasheet and Replacement


   Type Designator: AP15N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: SOP8
 

 AP15N10S substitution

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AP15N10S Datasheet (PDF)

 ..1. Size:1038K  cn apm
 ap15n10s.pdf pdf_icon

AP15N10S

AP15N10S 100V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =15A DS DR

 7.1. Size:6508K  allpower
 ap15n10.pdf pdf_icon

AP15N10S

AP15N10DATA SHEETDATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

 7.2. Size:2129K  cn apm
 ap15n10d-l.pdf pdf_icon

AP15N10S

AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS DR

 7.3. Size:2992K  cn apm
 ap15n10y.pdf pdf_icon

AP15N10S

AP15N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP15N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS DR

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Datasheet: AP150N04D , AP150P03NF , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , 7N65 , AP15N10Y , AP15N12D , AP15P04D , AP15P06D , , , , .

History: STD15N06LT4

Keywords - AP15N10S MOSFET datasheet

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