AP2302CI Todos los transistores

 ..1. Size:1763K  cn apm
 ap2302ci.pdf

AP2302CI 20V N-Channel Enhancement Mode MOSFET Description The AP2302CI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =2.3A DS D R

 8.1. Size:96K  ape
 ap2302gn-hf.pdf

AP2302GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS Compliant S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistanc

 8.2. Size:91K  ape
 ap2302n-hf.pdf

AP2302N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 64m Surface Mount Package ID 3.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resista

 8.3. Size:176K  ape
 ap2302agn.pdf

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the l

 8.4. Size:95K  ape
 ap2302gn.pdf

AP2302GN RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistance and cost-effectiven

 8.5. Size:94K  ape
 ap2302agn-hf.pdf

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V D Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist

 8.6. Size:849K  allpower
 ap2302.pdf

 8.7. Size:851K  allpower
 ap2302b.pdf

 8.8. Size:2068K  cn apm
 ap2302ai.pdf

AP2302AI 20V N-Channel Enhancement Mode MOSFET Description The AP2302AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS D R