ZXMN3A01E6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN3A01E6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SOT26

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ZXMN3A01E6 datasheet

 ..1. Size:225K  diodes
 zxmn3a01e6.pdf pdf_icon

ZXMN3A01E6

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc

 0.1. Size:224K  zetex
 zxmn3a01e6tc.pdf pdf_icon

ZXMN3A01E6

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc

 0.2. Size:224K  zetex
 zxmn3a01e6ta.pdf pdf_icon

ZXMN3A01E6

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc

 6.1. Size:242K  diodes
 zxmn3a01z.pdf pdf_icon

ZXMN3A01E6

A Product Line of Diodes Incorporated ZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A

MOSTRAR MÁS

Otros transistores... DMN4468LSS, DMN4800LSS, DMN4800LSSL, DMS3016SFG, DMS3016SSSA, ZXM61N03F, ZXM62N03G, ZXMD63N03X, IRFZ48N, ZXMN3A01F, ZXMN3A02N8, ZXMN3A02X8, ZXMN3A03E6, ZXMN3A04DN8, ZXMN3A04K, ZXMN3A06DN8, ZXMN3A14F