All MOSFET. ZXMN3A01E6 Datasheet

 

ZXMN3A01E6 Datasheet and Replacement


   Type Designator: ZXMN3A01E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT26
 

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ZXMN3A01E6 Datasheet (PDF)

 ..1. Size:225K  diodes
 zxmn3a01e6.pdf pdf_icon

ZXMN3A01E6

ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc

 0.1. Size:224K  zetex
 zxmn3a01e6tc.pdf pdf_icon

ZXMN3A01E6

ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc

 0.2. Size:224K  zetex
 zxmn3a01e6ta.pdf pdf_icon

ZXMN3A01E6

ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc

 6.1. Size:242K  diodes
 zxmn3a01z.pdf pdf_icon

ZXMN3A01E6

A Product Line of Diodes IncorporatedZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A

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Datasheet: DMN4468LSS , DMN4800LSS , DMN4800LSSL , DMS3016SFG , DMS3016SSSA , ZXM61N03F , ZXM62N03G , ZXMD63N03X , RU7088R , ZXMN3A01F , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F .

History: BUK9E08-55B | IRF5803D2PBF | STP10NK80Z | OSG60R580FTF | IRF6729MPBF | AOT12N50 | PSMN5R0-80PS

Keywords - ZXMN3A01E6 MOSFET datasheet

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