AP2307MI Todos los transistores

 

AP2307MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2307MI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT23
 

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AP2307MI Datasheet (PDF)

 ..1. Size:1505K  cn apm
 ap2307mi.pdf pdf_icon

AP2307MI

AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS DR

 8.1. Size:64K  ape
 ap2307gn.pdf pdf_icon

AP2307MI

AP2307GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60mD Surface Mount Device ID - 4ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, low on-resistance andGcost-effe

 8.2. Size:57K  ape
 ap2307gn-hf.pdf pdf_icon

AP2307MI

AP2307GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60mD Surface Mount Device ID - 4A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 8.3. Size:1032K  cn apm
 ap2307ai.pdf pdf_icon

AP2307MI

AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS DR

MOSTRAR MÁS

Otros transistores... AP2300AI , AP2300MI , AP2301BI , AP2302CI , AP2305AI , AP2305BI , AP2305MI , AP2307AI , K3569 , AP2311AI , AP2311MI , AP2312AI , AP2312MI , AP2313MI , AP2320MI , , .

History: AP2312AI | AP2312MI

 

 
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