AP2307MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2307MI

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT23

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AP2307MI datasheet

 ..1. Size:1505K  cn apm
 ap2307mi.pdf pdf_icon

AP2307MI

AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R

 8.1. Size:64K  ape
 ap2307gn.pdf pdf_icon

AP2307MI

AP2307GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effe

 8.2. Size:57K  ape
 ap2307gn-hf.pdf pdf_icon

AP2307MI

AP2307GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 8.3. Size:1032K  cn apm
 ap2307ai.pdf pdf_icon

AP2307MI

AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R

MOSTRAR MÁS

Otros transistores... AP2300AI, AP2300MI, AP2301BI, AP2302CI, AP2305AI, AP2305BI, AP2305MI, AP2307AI, 2N7002, AP2311AI, AP2311MI, AP2312AI, AP2312MI, AP2313MI, AP2320MI, AP4N10MI, AP4N15MI