AP2307MI MOSFET: P-Ch, 20V, 7.1A. Full datasheet with pinout, specifications and replacement transistor list

AP2307MI Datasheet (PDF)

..1. Size:1505K cn apm
ap2307mi.pdf pdf_icon

AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS DR

8.1. Size:64K ape
ap2307gn.pdf pdf_icon

AP2307GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60mD Surface Mount Device ID - 4ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, low on-resistance andGcost-effe

8.2. Size:57K ape
ap2307gn-hf.pdf pdf_icon

AP2307GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60mD Surface Mount Device ID - 4A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

8.3. Size:1032K cn apm
ap2307ai.pdf pdf_icon

AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS DR

Datasheet: AP2300AI , AP2300MI , AP2301BI , AP2302CI , AP2305AI , AP2305BI , AP2305MI , AP2307AI , 2N7002 , AP2311AI , AP2311MI , AP2312AI , AP2312MI , AP2313MI , AP2320MI , AP4N10MI , AP4N15MI .