AP2312MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2312MI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 133 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SOT23

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AP2312MI datasheet

 ..1. Size:1302K  cn apm
ap2312mi.pdf pdf_icon

AP2312MI

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

 8.1. Size:68K  ape
ap2312gn.pdf pdf_icon

AP2312MI

AP2312GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50m D Surface mount package ID 4.3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

 8.2. Size:1137K  allpower
ap2312.pdf pdf_icon

AP2312MI

 8.3. Size:1228K  cn apm
ap2312ai.pdf pdf_icon

AP2312MI

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

Otros transistores... AP2305AI, AP2305BI, AP2305MI, AP2307AI, AP2307MI, AP2311AI, AP2311MI, AP2312AI, AO3401, AP2313MI, AP2320MI, AP4N10MI, AP4N15MI, AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD