AP2312MI MOSFET: N-Ch, 20V, 6.8A. Full datasheet with pinout, specifications and replacement transistor list

AP2312MI Datasheet (PDF)

..1. Size:1302K cn apm
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AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

8.1. Size:68K ape
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AP2312GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50mD Surface mount package ID 4.3ASSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

8.2. Size:1137K allpower
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8.3. Size:1228K cn apm
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AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .