AP4N10MI Todos los transistores

 

AP4N10MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4N10MI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.76 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.8 nS
   Cossⓘ - Capacitancia de salida: 17 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: SOT23
 

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AP4N10MI Datasheet (PDF)

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 ap4n10mi.pdf pdf_icon

AP4N10MI

AP4N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP4N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 3.8A DS DR

 9.1. Size:163K  ape
 ap4n1r8cmt-a.pdf pdf_icon

AP4N10MI

AP4N1R8CMT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45VD Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N1R8C series are from Advanced Power innovated design andsilicon process technology to achieve

 9.2. Size:137K  ape
 ap4n1r1cdt-a.pdf pdf_icon

AP4N10MI

AP4N1R1CDT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45VD 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265AG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP4N1R1C series are from Advanced Power innovated designand silicon process technology to a

 9.3. Size:2029K  cn apm
 ap4n15mi.pdf pdf_icon

AP4N10MI

AP4N15MI 150V N-Channel Enhancement Mode MOSFET Description The AP4N15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =4A DS DR

MOSTRAR MÁS

Otros transistores... AP2307AI , AP2307MI , AP2311AI , AP2311MI , AP2312AI , AP2312MI , AP2313MI , AP2320MI , 4435 , AP4N15MI , AP4P05MI , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D .

History: BSS340NW

 

 
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