AP4N10MI MOSFET: N-Ch, 100V, 3.8A. Full datasheet with pinout, specifications and replacement transistor list

AP4N10MI Datasheet (PDF)

..1. Size:936K cn apm
ap4n10mi.pdf pdf_icon

AP4N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP4N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 3.8A DS DR

9.1. Size:163K ape
ap4n1r8cmt-a.pdf pdf_icon

AP4N1R8CMT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45VD Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N1R8C series are from Advanced Power innovated design andsilicon process technology to achieve

9.2. Size:137K ape
ap4n1r1cdt-a.pdf pdf_icon

AP4N1R1CDT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45VD 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265AG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP4N1R1C series are from Advanced Power innovated designand silicon process technology to a

9.3. Size:2029K cn apm
ap4n15mi.pdf pdf_icon

AP4N15MI 150V N-Channel Enhancement Mode MOSFET Description The AP4N15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =4A DS DR

Datasheet: AP2307AI , AP2307MI , AP2311AI , AP2311MI , AP2312AI , AP2312MI , AP2313MI , AP2320MI , 4435 , AP4N15MI , AP4P05MI , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D .