AP4N15MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4N15MI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 36 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de AP4N15MI MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP4N15MI datasheet

 ..1. Size:2029K  cn apm
 ap4n15mi.pdf pdf_icon

AP4N15MI

AP4N15MI 150V N-Channel Enhancement Mode MOSFET Description The AP4N15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =4A DS D R

 9.1. Size:163K  ape
 ap4n1r8cmt-a.pdf pdf_icon

AP4N15MI

AP4N1R8CMT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45V D Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180A G RoHS Compliant & Halogen-Free D S D D Description D AP4N1R8C series are from Advanced Power innovated design and silicon process technology to achieve

 9.2. Size:137K  ape
 ap4n1r1cdt-a.pdf pdf_icon

AP4N15MI

AP4N1R1CDT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45V D 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP4N1R1C series are from Advanced Power innovated design and silicon process technology to a

 9.3. Size:936K  cn apm
 ap4n10mi.pdf pdf_icon

AP4N15MI

AP4N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP4N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 3.8A DS D R

MOSTRAR MÁS

Otros transistores... AP2307MI, AP2311AI, AP2311MI, AP2312AI, AP2312MI, AP2313MI, AP2320MI, AP4N10MI, SPP20N60C3, AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, AP50N05D