AP4N15MI. Аналоги и основные параметры

Наименование производителя: AP4N15MI

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 36 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm

Тип корпуса: SOT23

Аналог (замена) для AP4N15MI

- подборⓘ MOSFET транзистора по параметрам

 

AP4N15MI даташит

 ..1. Size:2029K  cn apm
 ap4n15mi.pdf pdf_icon

AP4N15MI

AP4N15MI 150V N-Channel Enhancement Mode MOSFET Description The AP4N15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =4A DS D R

 9.1. Size:163K  ape
 ap4n1r8cmt-a.pdf pdf_icon

AP4N15MI

AP4N1R8CMT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45V D Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180A G RoHS Compliant & Halogen-Free D S D D Description D AP4N1R8C series are from Advanced Power innovated design and silicon process technology to achieve

 9.2. Size:137K  ape
 ap4n1r1cdt-a.pdf pdf_icon

AP4N15MI

AP4N1R1CDT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45V D 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP4N1R1C series are from Advanced Power innovated design and silicon process technology to a

 9.3. Size:936K  cn apm
 ap4n10mi.pdf pdf_icon

AP4N15MI

AP4N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP4N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 3.8A DS D R

ПОКАЗАТЬ ЕЩЁ

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