AP4P05MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4P05MI
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.4 nS
Cossⓘ - Capacitancia de salida: 59 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de AP4P05MI MOSFET
- Selecciónⓘ de transistores por parámetros
AP4P05MI datasheet
ap4p05mi.pdf
AP4P05MI -55V P-Channel Enhancement Mode MOSFET Description The AP4P05MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -55V I =-4.2A DS D R
ap4p052j.pdf
AP4P052J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP4P052 series are from Advanced Power innovated design and G D S TO-251(J) silicon process technology to achieve
ap4p052h.pdf
AP4P052H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description G AP4P052 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes
ap4p013les.pdf
AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe
Otros transistores... AP2311AI, AP2311MI, AP2312AI, AP2312MI, AP2313MI, AP2320MI, AP4N10MI, AP4N15MI, SKD502T, AP50G03GD, AP50H06NF, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, AP50N05D, AP50N06D
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet
