AP4P05MI. Аналоги и основные параметры

Наименование производителя: AP4P05MI

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.4 ns

Cossⓘ - Выходная емкость: 59 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm

Тип корпуса: SOT23

Аналог (замена) для AP4P05MI

- подборⓘ MOSFET транзистора по параметрам

 

AP4P05MI даташит

 ..1. Size:1517K  cn apm
 ap4p05mi.pdf pdf_icon

AP4P05MI

AP4P05MI -55V P-Channel Enhancement Mode MOSFET Description The AP4P05MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -55V I =-4.2A DS D R

 8.1. Size:67K  ape
 ap4p052j.pdf pdf_icon

AP4P05MI

AP4P052J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP4P052 series are from Advanced Power innovated design and G D S TO-251(J) silicon process technology to achieve

 8.2. Size:68K  ape
 ap4p052h.pdf pdf_icon

AP4P05MI

AP4P052H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description G AP4P052 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes

 9.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P05MI

AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe

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