AP4P05MI - аналоги и даташиты транзистора

 

AP4P05MI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP4P05MI
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.4 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для AP4P05MI

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP4P05MI Datasheet (PDF)

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ap4p05mi.pdfpdf_icon

AP4P05MI

AP4P05MI -55V P-Channel Enhancement Mode MOSFET Description The AP4P05MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -55V I =-4.2A DS DR

 8.1. Size:67K  ape
ap4p052j.pdfpdf_icon

AP4P05MI

AP4P052JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP4P052 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achieve

 8.2. Size:68K  ape
ap4p052h.pdfpdf_icon

AP4P05MI

AP4P052HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P052 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 9.1. Size:176K  ape
ap4p013les.pdfpdf_icon

AP4P05MI

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

Другие MOSFET... AP2311AI , AP2311MI , AP2312AI , AP2312MI , AP2313MI , AP2320MI , AP4N10MI , AP4N15MI , SKD502T , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D , AP50N05D , AP50N06D .

 

 
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