AP50G03GD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50G03GD

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 131 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO252-4L

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AP50G03GD datasheet

 ..1. Size:1819K  cn apm
 ap50g03gd.pdf pdf_icon

AP50G03GD

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP50G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =52A DS D R

 9.1. Size:95K  ape
 ap50g60sw.pdf pdf_icon

AP50G03GD

AP50G60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 45A Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vo

 9.2. Size:95K  ape
 ap50g60w-hf.pdf pdf_icon

AP50G03GD

AP50G60W-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features C High Speed Switching VCES 600V Low Saturation Voltage IC 40A VCE(sat),Typ.=2.5V@IC=40A RoHS Compliant & Halogen-Free G C C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter

 9.3. Size:96K  ape
 ap50g60sw-hf.pdf pdf_icon

AP50G03GD

AP50G60SW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 45A Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G Built-in Fast Recovery Diode C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitte

MOSTRAR MÁS

Otros transistores... AP2311MI, AP2312AI, AP2312MI, AP2313MI, AP2320MI, AP4N10MI, AP4N15MI, AP4P05MI, K4145, AP50H06NF, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, AP50N05D, AP50N06D, AP50N06NF