AP50G03GD Todos los transistores

 

AP50G03GD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50G03GD
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 131 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO252-4L
 

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AP50G03GD Datasheet (PDF)

 ..1. Size:1819K  cn apm
 ap50g03gd.pdf pdf_icon

AP50G03GD

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP50G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =52A DS DR

 9.1. Size:95K  ape
 ap50g60sw.pdf pdf_icon

AP50G03GD

AP50G60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vo

 9.2. Size:95K  ape
 ap50g60w-hf.pdf pdf_icon

AP50G03GD

AP50G60W-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesC High Speed Switching VCES 600V Low Saturation Voltage IC 40AVCE(sat),Typ.=2.5V@IC=40A RoHS Compliant & Halogen-FreeGCCTO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter

 9.3. Size:96K  ape
 ap50g60sw-hf.pdf pdf_icon

AP50G03GD

AP50G60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitte

MOSTRAR MÁS

Otros transistores... AP2311MI , AP2312AI , AP2312MI , AP2313MI , AP2320MI , AP4N10MI , AP4N15MI , AP4P05MI , K4145 , AP50H06NF , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D , AP50N05D , AP50N06D , AP50N06NF .

History: SWD1N60DC | SWD19N10 | CS2698ANR | BSF450NE7NH3G | SM1A16PUB | AP9561GM-HF | S80N18RN

 

 
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