AP50N03DF Todos los transistores

 

AP50N03DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50N03DF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: PDFN3X3-8L
 

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AP50N03DF Datasheet (PDF)

 ..1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03DF

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS DR

 6.1. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03DF

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

 7.1. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03DF

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS DR

 7.2. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03DF

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

MOSTRAR MÁS

Otros transistores... AP2320MI , AP4N10MI , AP4N15MI , AP4P05MI , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , 5N65 , AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D .

History: AP50N20MP

 

 
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