AP50N03DF. Аналоги и основные параметры

Наименование производителя: AP50N03DF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 26 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.3 ns

Cossⓘ - Выходная емкость: 135 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm

Тип корпуса: PDFN3X3-8L

Аналог (замена) для AP50N03DF

- подборⓘ MOSFET транзистора по параметрам

 

AP50N03DF даташит

 ..1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03DF

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

 6.1. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03DF

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 7.1. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03DF

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R

 7.2. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03DF

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP2320MI, AP4N10MI, AP4N15MI, AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD, AP50N03D, 5N65, AP50N04D, AP50N05D, AP50N06D, AP50N06NF, AP50N10D, AP50N10P, AP50N20MP, AP80P10D