AP50N03DF - аналоги и даташиты транзистора

 

AP50N03DF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50N03DF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 26 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.3 ns
   Cossⓘ - Выходная емкость: 135 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: PDFN3X3-8L
 

 Аналог (замена) для AP50N03DF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP50N03DF Datasheet (PDF)

 ..1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03DF

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS DR

 6.1. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03DF

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

 7.1. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03DF

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS DR

 7.2. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03DF

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP2320MI , AP4N10MI , AP4N15MI , AP4P05MI , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , 5N65 , AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D .

History: AP50N04D

 

 
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