AP80P10D Todos los transistores

 

AP80P10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80P10D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 280 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 388 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO252
 

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AP80P10D Datasheet (PDF)

 ..1. Size:1085K  cn apm
 ap80p10d.pdf pdf_icon

AP80P10D

AP80P10D -100V P-Channel Enhancement Mode MOSFET Description The AP80P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-80A DS DR

 7.1. Size:1257K  cn apm
 ap80p10p ap80p10t.pdf pdf_icon

AP80P10D

AP80P10PIT -100V P-Channel Enhancement Mode MOSFET Description The AP80P10P/T uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-80A DS DR

 9.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P10D

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 9.2. Size:1788K  cn apm
 ap80p04d.pdf pdf_icon

AP80P10D

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS DR

MOSTRAR MÁS

Otros transistores... AP50N03DF , AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , STP80NF70 , AP8205A-21 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI .

 

 
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