All MOSFET. AP80P10D Datasheet

 

AP80P10D Datasheet and Replacement


   Type Designator: AP80P10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 388 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252
 

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AP80P10D Datasheet (PDF)

 ..1. Size:1085K  cn apm
 ap80p10d.pdf pdf_icon

AP80P10D

AP80P10D -100V P-Channel Enhancement Mode MOSFET Description The AP80P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-80A DS DR

 7.1. Size:1257K  cn apm
 ap80p10p ap80p10t.pdf pdf_icon

AP80P10D

AP80P10PIT -100V P-Channel Enhancement Mode MOSFET Description The AP80P10P/T uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-80A DS DR

 9.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P10D

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 9.2. Size:1788K  cn apm
 ap80p04d.pdf pdf_icon

AP80P10D

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS DR

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Datasheet: AP50N03DF , AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , STP80NF70 , AP8205A-21 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI .

History: STD4NK80Z | CM20N60F | STD4NK60Z-1 | STD4NK50ZD | STD45N10F7 | JMSH1006PK

Keywords - AP80P10D MOSFET datasheet

 AP80P10D cross reference
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