AP8H04DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP8H04DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: PDFN3X3-8L

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AP8H04DF datasheet

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AP8H04DF

AP8H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10.8A DS D R

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AP8H04DF

AP8H04S 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8A DS D R

 9.1. Size:1689K  cn apm
 ap8h06s.pdf pdf_icon

AP8H04DF

AP8H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP8H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8A DS D R

Otros transistores... AP50N10D, AP50N10P, AP50N20MP, AP80P10D, AP8205A-21, AP8205S, AP85N04NF, AP8814A, 4N60, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S, AP90N02D