AP8H04DF Todos los transistores

 

AP8H04DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP8H04DF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: PDFN3X3-8L
 

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AP8H04DF Datasheet (PDF)

 ..1. Size:1214K  cn apm
 ap8h04df.pdf pdf_icon

AP8H04DF

AP8H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10.8A DS DR

 8.1. Size:2038K  cn apm
 ap8h04s.pdf pdf_icon

AP8H04DF

AP8H04S 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8A DS DR

 9.1. Size:1689K  cn apm
 ap8h06s.pdf pdf_icon

AP8H04DF

AP8H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP8H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8A DS DR

Otros transistores... AP50N10D , AP50N10P , AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AP85N04NF , AP8814A , 4N60 , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D .

History: STP110N8F7 | AP85T08GP | WMJ26N60C4 | AOI1N60L | ELM32400LA

 

 
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