AP8H04DF MOSFET: N-Ch, 40V, 10.8A. Full datasheet with pinout, specifications and replacement transistor list

AP8H04DF Datasheet (PDF)

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AP8H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10.8A DS DR

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AP8H04S 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8A DS DR

9.1. Size:1689K cn apm
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AP8H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP8H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .