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AP8H06S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP8H06S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14.2 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: SOP8
 

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AP8H06S Datasheet (PDF)

 ..1. Size:1689K  cn apm
 ap8h06s.pdf pdf_icon

AP8H06S

AP8H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP8H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8A DS DR

 9.1. Size:1214K  cn apm
 ap8h04df.pdf pdf_icon

AP8H06S

AP8H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10.8A DS DR

 9.2. Size:2038K  cn apm
 ap8h04s.pdf pdf_icon

AP8H06S

AP8H04S 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8A DS DR

Otros transistores... AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , IRF1407 , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF .

History: IRF7331PBF-1 | SED10080GG | S70N08ZRN

 

 
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