AP8H06S MOSFET: N-Ch, 60V, 8.2A. Full datasheet with pinout, specifications and replacement transistor list

AP8H06S Datasheet (PDF)

..1. Size:1689K cn apm
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AP8H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP8H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8A DS DR

9.1. Size:1214K cn apm
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AP8H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10.8A DS DR

9.2. Size:2038K cn apm
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AP8H04S 40V N+N-Channel Enhancement Mode MOSFET Description The AP8H04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8A DS DR

Datasheet: AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , IRF1407 , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF .