AP8P04S Todos los transistores

 

AP8P04S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP8P04S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.7 nS
   Cossⓘ - Capacitancia de salida: 134 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: SOP8
 

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AP8P04S Datasheet (PDF)

 ..1. Size:1717K  cn apm
 ap8p04s.pdf pdf_icon

AP8P04S

AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R

 8.1. Size:1507K  cn apm
 ap8p04mi.pdf pdf_icon

AP8P04S

AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS DR

 9.1. Size:1725K  cn apm
 ap8p06s.pdf pdf_icon

AP8P04S

AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS DR

Otros transistores... AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , IRF2807 , AP8V06S , AP90N02D , AP90N02NF , , , , , .

 

 
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