AP8P04S Specs and Replacement
Type Designator: AP8P04S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.7 nS
Cossⓘ - Output Capacitance: 134 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOP8
AP8P04S substitution
- MOSFET ⓘ Cross-Reference Search
AP8P04S datasheet
ap8p04s.pdf
AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R ... See More ⇒
ap8p04mi.pdf
AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS D R ... See More ⇒
ap8p06s.pdf
AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R ... See More ⇒
Detailed specifications: AP85N04NF, AP8814A, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, RFP50N06, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF, AP16P02S, AP180N03D
Keywords - AP8P04S MOSFET specs
AP8P04S cross reference
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