AP180N03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP180N03D Datasheet (PDF)

..1. Size:1530K cn apm
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AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS DR

6.1. Size:1647K cn apm
ap180n03p ap180n03t.pdf pdf_icon

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS DR

7.1. Size:1493K cn apm
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AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR

7.2. Size:1759K cn apm
ap180n08p ap180n08t.pdf pdf_icon

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS DR

Otros transistores... AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , AP15P10D , AP16P01BF , AP16P02S , IRFZ24N , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , AP200N10MP .