AP180N03D - аналоги и даташиты транзистора

 

AP180N03D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP180N03D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 187 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6.3 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP180N03D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP180N03D Datasheet (PDF)

 ..1. Size:1530K  cn apm
ap180n03d.pdfpdf_icon

AP180N03D

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS DR

 6.1. Size:1647K  cn apm
ap180n03p ap180n03t.pdfpdf_icon

AP180N03D

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS DR

 7.1. Size:1493K  cn apm
ap180n04nf.pdfpdf_icon

AP180N03D

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR

 7.2. Size:1759K  cn apm
ap180n08p ap180n08t.pdfpdf_icon

AP180N03D

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS DR

Другие MOSFET... AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , AP15P10D , AP16P01BF , AP16P02S , IRFZ24N , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , AP200N10MP .

History: SED8840 | AP200N10MP

 

 
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