AP200N04NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP200N04NF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.9 nS

Cossⓘ - Capacitancia de salida: 1930 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: PDFN5X6-8L

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AP200N04NF datasheet

 ..1. Size:1438K  cn apm
 ap200n04nf.pdf pdf_icon

AP200N04NF

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R

 6.1. Size:1742K  allpower
 ap200n04.pdf pdf_icon

AP200N04NF

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 ap200n04d.pdf pdf_icon

AP200N04NF

 6.3. Size:1341K  cn apm
 ap200n04tlg5.pdf pdf_icon

AP200N04NF

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R

MOSTRAR MÁS

Otros transistores... AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I, IRFB31N20D, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI