AP200N10MP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP200N10MP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 148 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO247

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AP200N10MP datasheet

 ..1. Size:1458K  cn apm
 ap200n10mp.pdf pdf_icon

AP200N10MP

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS D R

 7.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N10MP

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R

 7.2. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N10MP

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R

 7.3. Size:1498K  cn apm
 ap200n12p ap200n12t.pdf pdf_icon

AP200N10MP

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R

MOSTRAR MÁS

Otros transistores... AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5, IRF1405, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI