AP200N10MP - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP200N10MP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 148 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 740 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: TO247
Аналог (замена) для AP200N10MP
AP200N10MP Datasheet (PDF)
ap200n10mp.pdf
AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS DR
ap200n15mp.pdf
AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR
ap200n15tlg1.pdf
AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR
ap200n12p ap200n12t.pdf
AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type135V I =200A DS DR
Другие MOSFET... AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , IRF1405 , AP200N15MP , AP200N15TLG1 , AP20G03GD , AP280N10MP , AP2N20MI , AP2N30MI , AP2N7002A , AP2P15MI .
History: IRF3205H | 2SJ417 | AP200N15MP | CM20N60P | WTM2305 | TMD830 | AP4N15MI
History: IRF3205H | 2SJ417 | AP200N15MP | CM20N60P | WTM2305 | TMD830 | AP4N15MI
Список транзисторов
Обновления
MOSFET: SLI40N26C | SLB40N26C | RM150N100HD | HYG043N10NS2B | HYG043N10NS2P | HCA60R070F | FTP16N06A | AGM615MNA | AGM615MN | AGM615D | AGM614MNA | AGM614MN | AGM614MBP-M1 | AGM614MBP | AGM614D | AGM614A-G
Popular searches
bc108b | oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet





