AP200N15TLG1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP200N15TLG1 Datasheet (PDF)

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AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

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AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

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AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type135V I =200A DS DR

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AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS DR

Otros transistores... AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP , IRFZ48N , AP20G03GD , AP280N10MP , AP2N20MI , AP2N30MI , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD .